Progress in HgTe colloidal quantum dots infrared detectors: from single-element devices to focal plane arrays

Abstract

Infrared detectors have a wide range of applications in temperature monitoring, industrial detection, automotive auxiliary driving, and material identification due to their unique capabilities such as temperature sensitivity, molecular bond vibration recognition, and haze penetration. Infrared detection relies on infrared materials such as InGaAs, InSb, MCT and superlattices to show good photoelectric properties. Unfortunately, these traditional infrared detection materials require high-quality lattice-matched single crystal substrates to grow on and electronically interconnect with the readout circuit by inverted bonding, which greatly limits their application due to their high cost and complexity. In recent years, new infrared materials such as colloidal quantum dots, black phosphorus, MoS2 and graphene have shown excellent infrared detection properties. Among many new infrared materials, HgTe colloidal quantum dots have the widest tunable absorption wavelength, including short-wave infrared (1.5~ 2.5 μm), mid-wave infrared (3~5 μm), and long-wave infrared (8~12 μm). Moreover, HgTe colloidal quantum dots have a solution process that is low cost and can be used for mass integration. For HgTe colloidal quantum dot infrared detector, we have carried out a series of research and exploration from single-element devices to focal plane array. In this paper, we summarize our recent progress in HgTe colloidal quantum dots infrared detectors from single-element devices to focal plane arrays.