Abstract
The article is devoted to the modeling of a two-bit pin-diode. The possibility of programming opening time of the device based on the pin-diode is shown. The design consisting of a pin diode and two floating gates on the surface of i-region is considered. The addition of electrodes to the surface of the i-region makes it possible to regulate the concentration of electrons and holes within the larger limits in compare with the single-gate structure creating enriched and depleted are-as in the structure. Programming is carried out by applying the appropriate voltage to the control electrodes of the floating gates. It is shown that the charge generated on the floating gate changes characteristics of the i-region of the pin diode.The key elements of complex simulation of the two-gate pin diode are simulation of charge accumulation mechanism on the floating gate, simulation of pin-diode opening time and calibration of numerical model. Simulation is performed in Synopsys Sentaurus TCAD. Physical models describing traps and their parameters, particle tunneling, transport phenomena in dielectrics and amorphous films are used in simulation. As a result of modeling, the opening time dependences on size, floating gate location and floating gate charge magnitude are obtained.It is shown that the pin-diode 2-gate structures allow to change the opening time in a wider range than the single-gate ones. To program a large range of pin-diode opening times, it is 2 gate structure that is advisable to use. The obtained results indicate that it is possible to implement a two-bit programming pin-diode and expand its functionality.
Highlights
The key elements of complex simulation of the two-gate pin diode are simulation of charge accumulation mechanism on the floating gate, simulation of pin-diode opening time and calibration of numerical model
It is shown that the pin-diode 2-gate structures allow to change the opening time in a wider range than the singlegate ones
) (Acceptor Level EnergyMid= 1.0 FromConductionBand Conc= 1e19 eXSection= 1e-13 hXSection= 1e-13 eBarrierTunneling(NonLocal= "Gateoxb_Substrate" NonLocal= "Gateoxt_Polygate" NonLocal= "Gateoxt1_Polygate1")
Summary
В. Перепеловский Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" им. Л. Иванов Санкт-Петербургский национальный исследовательский университет информационных технологий, механики и оптики ул. Показана возможность программирования времени открытия устройства на основе pin-диода. Рассмотрена конструкция, состоящая из pin-диода и двух плавающих затворов на поверхности i-области. Что создаваемый на плавающем затворе заряд изменяет характеристики i-области pin-диода. Важными элементами комплексного моделирования двухзатворного pin-диода являются моделирование механизма накопления заряда на плавающих затворах, моделирование времени открытия pin-диода, калибровка численной модели. В результате моделирования получены зависимости времени открытия от размеров, расположения плавающих затворов и значения заряда на плавающих затворах. Что двухзатворные структуры pin-диода позволяют изменять время открытия в более широких пределах, чем однозатворные. Для цитирования: Программирование двухбитного pin-диода в среде Synopsys Sentaurus TCAD / А.
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