Abstract

Metal nanowires (NWs) have shown superior advances for the next-generation transparent conducting (TC) materials. Most concerns were focused on uniform conductive films; however, fabrication of a programmed circuit is still lacking. Here, we demonstrate a programmable ultrafast welding method by pulsed laser beam scanning under ambient conditions to achieve a Cu NW pattern-free TC circuit as well as various size films. High-aspect ratio Cu NWs (> 3000) are synthesized through an oleylamine-mediated solution system. Pulsed ultraviolet laser irradiation together with a programmed moving station is set up for the welding of Cu NW networks. Finite element simulations reveal that the transient heating by efficient absorption of UV light (∼ 250 nm) could remove the organic residues on the surface and realize local welding of interlaced NW junctions. With only 10 ms pulsed irradiation, high optoelectronic performance (33 ohm/sq. at 87% transmittance at 550 nm) and excellent stability of the Cu NW TC film have been achieved. The line-by-line and selected route scanning modes could rapidly make large area TC films and directly write flexible circuits. Moreover, completely transparent micron-size UV and blue LED chips are fabricated and successfully lit with bright emission. This method opens up a future way of circuit and device fabrication by direct one-step laser writing.

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