Abstract
This article presents the design of non-standard equipment for obtaining experimental data about defects in thin film semiconductor structures. The idea of using low-powered Peltier element programmed to cause small temperature changes in semiconductor structures is scanning of the energy bandgap and thermal stimulation of the trapped charge carriers for defects analysis. Block diagram, control algorithm and PCB layout of the testing stand are given. Samples consisting of organic semiconductor and aluminum electrodes are examined for demonstration of the device working capacity. Energy distribution and concentration of the existing defects are determined.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
