Abstract
A novel programmable negative differential resistance (NDR) device based on the field-effect diode is proposed. The field-effect diode (FED) is a gated diode and compatible with semiconductor on insulator (SOI) CMOS technology. Semiconductor device simulator tools are used to simulate the structure of the FED. Then, it is employed to design the programmable NDR device. The operating principles of this new device are similar to the comparable MOSFET device. The proposed design is a unique device that consists of only three transistors and can be programmed by an isolated gate.
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