Abstract
A nonvolatile organic field-effect transistor (OFET) with a polymeric electret as gate insulator and spun cast film of lead phthalocyanine (PbPc) as semiconductor channel is reported. Hysteresis induced by gate–bias stress was exploited to study nonvolatile memory effects. The observation of the hysteresis and memory window is proposed to originate from charge storage in the polymeric electret. The on state retention time for the OFET memory device is more than 5 h and the device can reproduce continuous write–read–erase–read switching cycles.
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