Abstract
In this paper, a new optical IC device, which an arbitrary refractive index distribution pattern can be written in and erased optically, is proposed and some characteristics of this device are experimentally verified. This device utilizes the combination of three physical properties of Bi12SiO20(BSO) crystal: a large electro-optic effect, a strongly wavelength-dependent photoconductivity effect, and a high dark resistivity with long carrier trapping time. These properties of BSO are used in PROM (Pockels Readout Optical Modulator) type memory and display device.(1)(2)
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