Abstract
The growth of Sn whiskers from Ti2SnC/Sn-X (X = Sn, Bi, Pb, Ga) samples was studied in this work to understand the effect of alloying elements on whiskering behaviors. The mobility of source Sn atoms relating with the formation and migration of defects was found to be the critical factor dominating the growth rate, with the gathering of which to grow whiskers on the surface acts as an effective means to lower the enthalpy. As a result, the source Sn atoms would migrate to whisker root spontaneously, making the growth of whiskers the nature of materials, and external factors like compressive stress or oxidation are no more necessary but facilitate the whiskering process by promoting the mobility of source Sn atoms.
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