Abstract
A systematic study of program-disturb mechanisms in split-gate memory in the temperature range $-\hbox{45} ^{\circ}\hbox{C}$ to 150 $^{\circ}\hbox{C}$ is presented. At low temperatures, the dominant program disturb is initiated by interface-trap-assisted band-to-band tunneling in the split-gate channel area, whereas at high temperatures, it is initiated by surface generation in the select-gate channel area. The effects of single interface traps on program disturb have been analyzed and quantified. A split-gate memory cell with a high-quality $\hbox{Si}{-}\hbox{SiO}_{2}$ interface provides the strong program-disturb immunity required for high-temperature and automotive embedded applications.
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