Abstract
Hot carrier induced damage in InP double heterojunction bipolar transistors (DHBTs) is investigated using a current transient technique. By monitoring the temporal evolution of base current transient, the hot carrier induced damage in the base region is quantitatively characterized. The spatial distribution of the traps at the extrinsic base surface induced by the hot carrier stress can be determined by using a charge tunneling model to model the base current transient. The results demonstrate the effectiveness of profiling the hot carrier induced damage in InP/InGaAs HBTs by the current transient technique.
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