Profiling of the p–n Junction in Silicon by the Electrochemical Capacitance–Voltage Technique

Abstract

The formation of p–n junctions by boron implantation in Si was investigated using electrochemical capacitance–voltage (ECV) techniques. An optimized set of parameters for N(x) profiling has led to the choice of bias voltage and determination of the effective dissolution valence of z = 3.3 of the used 0.2 M NH4F · HF electrolyte. The results obtained by ECV were compared with those achieved by the spreading resistance technique and theoretically calculated by SUPREM.