Profiles of dislocation images in Si by scanning microscopy in EBIC. Dependence on the space charge cylinder radius

Abstract

This paper deals with a mathematical procedure for the calculation of EBIC profiles, accounting for the space charge cylinders around the dislocations. On the basis of the relative results the experimental data, regarding the temperature and resistivity effects on the contrast of the dislocation images, are interpreted in terms of perturbations of the equilibrium statistics of occupation of the dangling bonds along dislocations.