Abstract
Experimental profile data for MeV arsenic, phosphorus and boron ions implanted into silicon are presented. The energy ranges are 3–11 MeV, 1–7 MeV and 1–4 MeV for arsenic, phosphorus and boron respectively. Profiles are obtained from secondary ion mass spectroscopy (SIMS). To make the profile data easily accessible in integrated circuit processing design, moments parameters are extracted and fitted into profile models. The R p, ΔR p, skewness and kurtosis of the measured data were fitted by polynomials to facilitate convenient calculations for process simulators. It is found that MeV arsenic, phosphorus and boron profiles can all be adequately modeled by Pearson-IV distribution functions, while Gaussians result in large errors in the tail portions of the profiles.
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