Abstract
Implanted Zn impurities were found to segregate at the interface between ion-implanted amorphous Si and underlying crystal Si after pulsed laser irradiation with energy densities less than that required to cause liquid phase epitaxial regrowth. Both time-resolved reflectivity from the back and front sides indicate a strong correlation between the internal Zn impurity segregation and explosive crystallization. This measurement also gives a direct evidence of coexistence of a liquid Si and polycrystalline nuclei at the surface layer at energy densities from 0.27 to 0.5 J/cm 2.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
