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Abstract
AbstractA method is described to modify profiles of resist patterns in novolac and diazo‐oxide containing systems. After patterning of the resist, two successive uniform flood exposures are given, one with deep UV (254 nm) at water‐free conditions and the next with near UV (λ > 300 nm) at normal atmospheric conditions. The profile which results after development is vertical, concave or overhanging depending on flood exposure conditions and development processing. As the method includes a flood near UV exposure at atmospheric conditions the imagewise exposure energy can be reduced to approximately 35 percent of the normal value. Furthermore it gives also the possibility of using the resist as a deep UV resist. Another important implication is that standing wave effects are completely eliminated.
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