Abstract
A new low-energy plasma cleaning (LEPC) process, a dry low-temperature process for wafer cleaning before epitaxial growth has been realized on a bridge type production system for 200 and 300 mm wafers. This cleaning technology enables the damage free removal of carbon and oxygen from the wafer surface in a dry process at low temperature (<200 °C). Epitaxial growth after LEPC demonstrates that the cleaning procedure does not damage the single crystalline structure of the wafer surface. Based on the same plasma source, a low-energy plasma enhanced chemical vapor deposition (LEPECVD) process, a deposition process which allows deposition rates in the range between 0.01 and 10 nm/s at 550 °C, will be discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
