Abstract
Design considerations and first evaluation results are presented for a deep UV exposure system designed for volume production of 64 Mb DRAMs and related IC products. The main features of the system are the all-quartz, wide field, high NA projection lens built into a standardized machine body with high precision stage and through the lens alignment system, and a narrow bandwidth KrF excimer laser as light source. The imaging properties were evaluated by measuring the contrast transfer function. The resolution limit was determined to be better than 0.25 μm. For 0.35 μm features contrast is well over 60% and depth of focus greater than 1 μm. Single machine overlay and local distortion were evaluated, showing a total overlay capability of the system of ca. 0.1 μm. This work was part of the JESSI E162 project which has the objective to develop a fully production-worthy, integrated deep UV photosector for 0.35 micron lithography.
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