Abstract
The growth of II–VI semiconductors is performed in MOCVD systems (AIX 200 and AIX 200/4) with a capacity of one 2 in and one 4 in wafer or equivalent, respectively, on 2 in substrates. The growth of ZnSe, ZnSSe and ZnMgSSe has been carried out with several different precursor materials. The growth rate and compositon homogeneities across a 2 in wafer for ZnSe and ZnSSe, with and without rotation of the susceptor, were investigated. The growth rate homogeneity for ZnSe was calculated to be ±2%. The fabrication technology can be easily transferred to multiwafer reactors for the production of devices. Homogeneities in the range of ±1% are expected, due to the unique design with double rotation of the substrates.
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