Production of vertical nanowire resonators by cryogenic-ICP–DRIE

Abstract

Silicon resonant sensors with large surface area-to-volume ratios provide high weighing sensitivity. This fact implies the possibility for detection of slight mass changes [i.e. by attached nanoparticles (NPs)]. Vertical silicon nanowire (SiNW) resonators are therefore suitable for exposure assessment or airborne NPs. SiNW arrays are top-down fabricated by nanolithography and subsequent inductively coupled plasma reactive ion etching at cryogenic temperature. Nanolithography is performed by conventional UV-lithography and nanoimprint for even smaller structures. Wire diameters are further reduced by multiple thermal oxidations and oxide stripping at times. Parameter effects of cryogenic dry etching are studied for SiNW arrays.