Abstract
GaN epilayer grown on Sapphire by MOCVD technique has been irradiated with 75 MeV Sn 5+ ions to a fluence of 1×10 11, 10 12, 10 13 and 10 14 cm −2 and studied using depth-resolved positron annihilation spectroscopy. High-energy ion-induced defects are found to be Ga mono vacancies, which have been identified from the defect sensitive S-parameter values as well as from R-parameter values, for all fluence beyond 10 11 cm −2. It is also found that the concentration of vacancy defects increases with ion fluence.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
