Abstract
An ion beam deposition system to produce isotopically pure epitaxial thin films of different materials has been designed and built. Using negative ions, problems due to mass interference with molecular ions could be significantly reduced, thus allowing the production, for instance, of 29Si films of high purity. By including thermal processing and different analytical facilities to this system, in-situ studies of atomic transport as well as atomic exchange processes can be studied directly. Der vorliegende Artikel beschreibt den Aufbau eines Ionendepositionssystems, das zur Produktion isotopenreiner, epitaktischer Schichten entwickelt wurde. Durch die Verwendung negativer Ionen werden Masseninterferenzen mit molekularen Ionen für eine Vielzahl von Atomsorten vermieden. Damit wird beispielsweise die Produktion von isotopenreinen 29Si Schichten ermöglicht. Die Kombination von thermischer Prozessierung mit Analysemethoden zur Charakterisierung von Oberflächen und dünnen Schichten in einer UHV-Umgebung ermöglicht in-situ Studien von atomaren Transport- und Austauschprozessen.
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