Abstract
In this research, a novel method for manufacturing silicon (Si) nanoparticles (NPs) has been proposed. The process involves the use of ultraviolet (UV) irradiation and acrylic acid (AA) to induce Si NPs-AA polymerization. Si particles of varying sizes and an AA dispersion solution were subjected to UV radiation, leading to the formation of Si NPs coated with AA polymer, which separated to the top due to the volume increase. The Fourier-transform infrared (FT-IR) spectra confirmed the reaction between Si and AA by verifying the peak positions of the newly formed Si–C bond. The physical and chemical particle size measurements revealed that the Si NPs were surrounded by short-chain AA polymer clusters, accounting for approximately 15% of the cluster weight. Moreover, the Si particles' oxidation temperature in the Si NPs-AA cluster significantly decreased to about 450 °C. This technology holds promising potential for use in luminescent semiconductor materials, as it enables the selective separation of Si NPs.
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