Abstract
Abstract Polycrystalline diamond films on various substrates (W, Mo, Si, Si 3 N 4 , SiC and WCo) have been grown by the CVD method in a d.c. glow discharge plasma. The diamond crystal nucleation density was studied as a function of the substrate temperature in the range from 700 to 1100 °C. The experiments at constant discharge parameters have revealed the increase in the diamond nucleation density as the substrate heating temperature decreased. The diamond crystal density varied from 10 3 cm −2 at 900 °C to 10 8 cm −2 at 700 °C. An increase in the diamond nucleation density with decreasing synthesis temperature was observed on all types of substrate material.
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