Production of p‐Type Si/n‐Type β‐FeSi2 Heterojunctions Using Facing‐Targets Direct‐Current Sputtering and Evaluation of Their Resistance and Interface State Density

Abstract

Without a post‐annealing procedure, the β‐FeSi2 thin films are epitaxially grown on Si(111) wafer substrates via facing‐targets direct‐current sputtering. During epitaxial growth, the temperature for heating of substrates is maintained at 600 °C. The resultant p‐type Si/n‐type β‐FeSi2 heterojunctions are produced. At room temperature, a large leakage current under an applied reverse bias voltage together with a small photo‐detective performance is observed from the measured dark and irradiated current density–voltage curves of the created heterojunctions. Both of the conductance–voltage (G/ω–V) and capacitance–voltage (C–V) measurements at different frequencies (f) in the range of 5 kHz–1 MHz are performed in the dark at room temperature. The interface state density (Nss) and series resistance (Rs) in the created p‐type Si/n‐type β‐FeSi2 heterojunctions are computed and analyzed from the measured C–V–f and G/ω–V–f curves. Nss is found to be 3.48 × 1012 eV−1 cm−2 at 5 kHz and decreased to 4.68 × 1011 eV−1 cm−2 at 1 MHz. Moreover, the values of Rs at zero bias are 2.21 kΩ at 5 kHz and 13.66 Ω at 1 MHz. These results review the presence of Nss and Rs in the created heterojunctions, and they can be the cause to degrade the heterojunction performance.