Abstract
An experimental technique is presented for high temperature solid state diffusion bonding of two different crystals. The relative orientation of the crystals and the orientation of the boundary plane can be chosen arbitrarily. Unwanted recrystallization close to the boundary plane is avoided by precise adjustment of the applied bonding force. Special care is taken for preparation of the contact surfaces of the two crystals, to suppress as far as possible superficial straining and planarity defects on macroscopic and microscopic scales. This technique is of use for any stable two-phase system at thermal equilibrium, and has been applied successfully to obtain Al/Al 2Cu and Ag/Cu two-phase bicrystals. With both systems, a one hundred hour high temperature treatment is sufficient to produce interfaces free from embritteling porosites, on areas large enough to allow cutting of specimen for macroscopic mechanical tests. These experimental results and the kinetics of bonding are discussed and compared to the theoretical model proposed by Garmong, Paton and Argon (1975).
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