Production of organosilicon ions for SiC epitaxy

Abstract

The production of organosilicon ions in a Freeman-type ion source were studied for SiC heteroepitaxial growth on a Si wafer. One of the possibilities for SiC epitaxy is a low energy deposition of an organosilicon ion beam. The advantage of this technique is that the organosilicon ion already has a binding of Si and C. The organosilicon ion usually also has a dipole moment which is useful for atomic arrangement on a depositing surface. Methylsilane and dimethylsilane were introduced in a Freeman-type ion source and discharged for ionization. Because of fragmentation, methylsilylene ions and methylsilicenium ions were produced. The ions were accelerated and mass selected in order to create a well defined ion beam. The energy distribution, measured by a plasma monitor, was ±1 eV. By using this ion beam, heteroepitaxitial growth of 3C-SiC on Si was successfully created.