Abstract
A Cu (In, Ga)Se2 (CIGS) chalcopyrite-type structure solar cell is produced using magnetron sputtering with Cu0.75Ga0.25 and In targets, followed by a three-stage selenization process. A metallic precursor CuGa (maintained at ∼300 nm)/In (various indium film thickness) is used to study the process for the fabrication of a CIGS film. The sample that is selenized at 550 °C has a tetragonal chalcopyrite phase structure with main diffraction peaks (112) at 2θ ∼ 26.6° and other prominent peaks (220/204) and (312)/(116) crystal planes. A favorable atomic ratio for the CIGS films is achieved for respective ratios of [Ga/(In+Ga)] and [Cu/(In+Ga)] in the CIGS absorber layers of 0.28 and 0.99. These ratios are almost equal to the ratios for the respective precursor layer. The near-stoichiometric films are uniform and crack-free and have better crystalline quality and large surface grains. A CIGS heterojunction solar cell is synthesized and the photo-conversion efficiency is calculated.
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