Abstract
A study of the generation of H-induced defects in the Al–SiO2–Si system by vacuum ultraviolet radiation (hν=10 eV) shows that small cross-section hole traps in the bulk of the oxide and donor-type states at the Si–SiO2 interface are formed by different reactions paths. In both cases the production of atomic H, required for obtaining these defects, only involves neutral species. However, the source of the hydrogen producing the bulk hole traps is located at the Al–SiO2 interface, the source for the hydrogen inducing the donor-type interface states at the Si–SiO2 interface.
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