Abstract

We report the progress of production InP MMICs for low cost, high performance applications at Northrop Grumman Space Technology (NGST). Both InP HEMT and HBT technologies are being developed on 100 mm diameter InP substrates and this development is leading to lower costs that will rival both GaAs-based MMICs including GaAs-based metamorphic technologies with superior performance. Two specific InP niche product areas will be discussed-high linearity InP HBT power amplifiers and high frequency W-band low noise amplifiers

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