Abstract
In this study, Au/n-Si/p-CZTS/Ag solar cells have been produced by using PLD technique. Ultrathin CZTS films have been grown on n-Si wafer in different thicknesses depending on number of laser pulses. These ultrathin CZTS films were analysed by XRD, AFM and UV–vis spectra. J–V characteristics of Au/n-Si/p-CZTS/Ag solar cells have been determined based on thickness of ultrathin CZTS films under AM 1.5 solar radiation of 80 mW/cm2. Short circuit current density (mA/cm2), fill factor, open circuit voltage (V) and power conversion efficiency (%) of ultrathin CZTS film solar cells have been determined for device produced in this work. The photovoltaic (PV) characteristics of ultrathin CZTS film solar cells has been discussed in detail in this present article and, as a result, the ideal ultrathin CZTS film solar cell structure having the highest efficiency has been determined and concluded.
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