Abstract
The drive for miniaturisation of passive capacitor and filter devices requires dielectric materials with higher relative permittivities than can be attained using normal ferroelectrics. Relaxor ferroelectrics possess the required high relative permittivities but are incapable of being chemically doped to give a temperature stable capacitance. Work is presented detailing the design and development of a new class of temperature stable high volumetric efficiency multi-layer capacitors. Various compositions of high relative permittivity relaxor ferroelectrics are co-sintered in to a multi-layer capacitor with controllable temperature characteristics. The materials used are all doped perovskite Pb(Mg 1/3Nb 2/3)O 3 (PMN) compositions. The ceramic powder-processing route required to make such structures is summarised with reference to the unique device fabrication problems encountered. Dielectric measurements of the prototype devices are presented. ©
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