Abstract
The authors address the producibility and performance of self-aligned AlGaAs-GaAs heterojunction bipolar transistors (HBTs) for microwave power applications. Excellent device DC and RF characteristics and power performance have been demonstrated. The RF probing yield was consistently achieved from the DC screened HBTs. A f/sub max/ of 350 GHz was extrapolated for the common-base HBT. 7-12-GHz monolithic microwave integrated circuit (MMIC) amplifiers achieved a 4-W power level with 34% peak power added efficiency. A 7.5-14.0-GHz linear power amplifier demonstrated a low level of third-order intermodulation distortion. This excellent performance is achievable because of the characteristic uniformity of the material epitaxial growth and the simplicity of the self-aligned lithography process. >
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