Abstract
AbstractLow temperature electron spin resonance (ESR) study of Cz‐(100)Si/insulator structures with organosilicate films of low dielectric constant κ grown at 300 °C using plasma‐enhanced chemical vapor deposition (PECVD) reveals, after subjection to UV‐irradiation assisted thermal curing at 430 °C to remove organics, the observation of the NL8 ESR spectrum. This indicates the generation in the c‐Si substrate of singly ionized thermal double donor (TDD) defects with a core contained of oxygen atoms. The generation is found to be highly non uniform, which is concluded to be the result of interfacial stress acting as the major driving component in the enhancement of TDD formation during thermal treatment. This suggests substantial stress being involved with PECVD organosilicate low‐κ glasses. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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