Processing-texture relationships in dual-unbalanced magnetron deposition of TiN films

Abstract

There has been sustained interest in using TiN and other sputter deposited thin film materials in electronics applications, such as barrier coatings. However, it is difficult to produce “pin-hole free” coatings using conventional magnetron sputtering, since the high bias potentials required to produce dense films often result in substrate damage. “Unbalanced” magnetron sputtering may offer a low energy alternative since the ion-to-deposited-atom ratio can be greatly increased, permitting the ion-bombardment energy to be reduced to <200 eV, without sacrificing film density, hardness, or adhesion. As has been demonstrated previously, ion energy can have a profound effect on film texture, but what affect the “substitution” of ion flux for ion energy will have on film texture has not been determined. In this work, TiN films were deposited onto M2 steel via “unbalanced” magnetron sputtering in an attempt to correlate changes in film texture and film stress, with ion energy and flux.