Abstract
This work investigates the role of microstructure on the radiation tolerance of relaxor-ferroelectric, lead magnesium niobate-lead titanate, thin films for piezoelectric microelectromechanical system (MEMS) applications. Thin films comprised of 0.7Pb[Mg1/3Nb2/3]O3-0.3PbTiO3 were fabricated via chemical solution deposition on platinized silicon wafers. Processing parameters, i.e., pyrolysis and annealing temperatures and durations, were varied to change the microstructure of the films. The functional response of the films was characterized before and after exposure to gamma radiation [up to 10 Mrad(Si)]. Within the total ionization dose studied, all films showed a <5% change in dielectric response and polarization and <15% change in piezoelectric response, after irradiation. While all films showed substantial radiation tolerance, those with large columnar grains showed the highest dielectric and piezoelectric response and, therefore, might offer the best approach for enabling piezoelectric MEMS devices for applications in radiative environments.
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