Abstract
Some of the parameters which determine the amount of intermixing of GaAs/AIGaAs quantum wells (QWs) using SiO2 capping and rapid thermal annealing (RTA) have been studied using photoluminescence (PL) techniques. The degree of intermixing of QWs was found to be larger for thicker SiO2 capping layers and for shorter distances between the QWs and the oxide-wafer interface. A maximum PL energy difference of 90 meV was observed between the region covered by a 1.3 μm thick oxide layer and the non-oxide region in a wafer that was annealed at 1100° C for 15 s.
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