Abstract
ABSTRACTThis paper presents residual stress characterization and fracture analysis of thick silane based PECVD oxide films. The motivation for this work is to elucidate the factors contributing to residual stress, deformation and fracture of oxide films so as to refine the fabrication process for power MEMS. It is shown that residual stress in oxide films strongly depended on thermal processing history. Dissolved gases were found to play an important role in governing intrinsic stress. The tendency to form cracks is a strong function of film thickness and annealing temperature. Mixed mode fracture mechanics was applied to predict critical cracking temperature, and there is a fairly good match between theoretical predictions and experimental observations.
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