Abstract
ABSTRACTThe multiple-scan method of electron beam annealing has been used to activate shallow (Rp<150Å), highly doped silicon layers produced by ion implantation of arsenic at 10keV. Beam conditions have been optimised (600Wcm−2 for 100ms) to produce essentially undiffused layers, as determined by high resolution SIMS, containing high concentrations of electrically active arsenic impurities. Computer modelling of diffusion effects in such layers has been used to identify optimum beam conditions and the calculations have been compared with experimental results. Hot electron device structures, which depend on negligible diffusion and high electrical activity, have been fabricated using the multiplescan method with a peak annealing temperature of 900°C.
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