Processing of PtSe2 ultra-thin layers using Ar plasma

Abstract

This paper contains a detailed analysis of the Ar plasma treatment dynamics of the PtSe2/Al2O3 system comprising ultrathin PtSe2 layers with a thickness of 1–3 monomolecular layers. The impact of the etching process on the physical properties of the ultrathin PtSe2 layers was analysed using Raman spectroscopy and atomic force microscopy techniques in time intervals up to the complete decomposition of the PtSe2 layers. The processing duration that allowed the complete removal of the PtSe2 layer was determined for the investigated systems. The results, in combination with the optimised photolithography, were used for the active PtSe2 channel formation in the 3 ML PtSe2-based transfer line measurement structure using electrodes consisting of Ni and Au layers (with thicknesses of 20 and 40 nm, respectively). The electrical properties of the fabricated system confirm the effectiveness of commercially available PtSe2/Al2O3 samples in the fabrication of simple electronic devices utilising planar architecture, i.e. micro- and nanosensors.