Processing of Oriented K(Ta,Nb)O3 Films Using Chemical Solution Deposition

Abstract

K(Ta,Nb)O3 (KTN) thin films have been prepared by the chemical solution deposition method. KTN precursors consisted of a uniform mixture of K[Ta(OC2H5)6] and K[Nb(OC2H5)6] with interaction at the molecular level. Perovskite KTN thin films with the desired composition (Ta/Nb = 65/35, 50/50, and 35/65) were synthesized from the precursor solutions by the dip coating method. KTN thin films with (100) preferred orientation were successfully synthesized on MgO(100) and Pt(100)/MgO(100) substrates. X‐ray pole figure measurements showed that grains of KTN films had a prominent three‐dimensional regularity on MgO(100) and Pt(100)/MgO(100) surfaces. The Curie temperatures of KTN films decreased with increasing Ta/Nb ratio. Typical P‐E hysteresis loops were observed for KTN thin films of three compositions on Pt(100)/MgO(100) substrates. The values of remanent polarization (Pr) of KTN films increased as the Ta/Nb ratio changed from 65/35 to 35/65.