Abstract
We describe critical processing issues in our development of single-atom devices for solid-state quantum information processing. Integration of single 31 P atoms with control gates and single electron transistor (SET) readout structures is addressed in a silicon-based approach. Results on electrical activation of low-energy (15 keV) P implants in silicon show a strong dose effect on the electrical activation fractions. We identify dopant segregation to the SiO 2 /Si interface during rapid thermal annealing as a dopant loss mechanism and discuss means to minimize it. Silicon nanowire SET pairs with nanowire width of 10–20 nm are formed by electron-beam lithography in SOI. We present initial results from Coulomb blockade experiments and discuss issues of control gate integration for sub-40 nm gate pitches.
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