Abstract

Polycrystalline diamond films have unique properties for applications in advanced electronic devices. Undoped and doped polycrystalline diamond films are deposited on p type Si (100) and n type SiC (6H) substrates at the low surface deposition temperatures of 370deg - 530degC using a microwave plasma enhanced chemical vapor deposition (MPECVD) system in which the surface temperatures during deposition is monitored and controlled. The structure and microstructure of these films are characterized by X-ray diffraction, scanning electron microscopy, and Raman spectroscopy, and related to measured thermal and electrical properties. The room temperature in-plane thermal conductivity of the low surface temperature deposited thin films and electrical properties of the undoped and B- and N-doped films are measured over a temperature range of 25- 550degC.

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