Processing and properties of diamond films for applications in novel electronic devices

Abstract

Polycrystalline diamond films have unique properties for applications in advanced electronic devices. Undoped and doped polycrystalline diamond films are deposited on p type Si (100) and n type SiC (6H) substrates at the low surface deposition temperatures of 370deg - 530degC using a microwave plasma enhanced chemical vapor deposition (MPECVD) system in which the surface temperatures during deposition is monitored and controlled. The structure and microstructure of these films are characterized by X-ray diffraction, scanning electron microscopy, and Raman spectroscopy, and related to measured thermal and electrical properties. The room temperature in-plane thermal conductivity of the low surface temperature deposited thin films and electrical properties of the undoped and B- and N-doped films are measured over a temperature range of 25- 550degC.