Abstract
The deposition of thin Pb(ZrxTi1−x)O3 films by sol-gel and by metallo-organic decomposition (MOD) processes has been studied. Powders obtained from different precursor solutions were analyzed with respect to their decomposition and crystallization. Using a spin-coating technique, Pb(ZrxTi1−x)O3 films with zirconium concentrations ranging from x=0.2 to 0.75 have been deposited on Pt-electroded Si wafers. The lattice constants of the perovskite films and their dielectric and ferroelectric properties (permittivity, remanent polarization, coercive field strength) have been measured as a function of the zirconium concentration. The results are compared to the data obtained on bulk ceramics. For Pb(ZrxTi1−x)O3 films with a composition located at the morphotropic phase boundary (x≊0.53) the influence of the processing and the lead excess of the starting solutions on the film properties was examined. First measurements on the resistance degradation of thin Pb(Zr0.53Ti47)O3 films deposited by the MOD process are reported.
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