Abstract
The effects of wet chemical processing employed in device fabrication standards are studied on molybdenum oxide (MoOx) ultra-thin films. We have combined x-ray photoelectron spectroscopy (XPS), angle resolved XPS and x-ray reflectivity to gain insight into the changes in composition, structure and electronic states upon treatment of films with different initial stoichiometry prepared by reactive sputtering. Our results show significant reduction effects associated with the development of gap states in MoOx, as well as changes in the composition and structure of the films, systematically correlated with the initial oxidation state of Mo.
Highlights
Molybdenum oxide (MoOx) is a transition metal oxide showing extraordinary electrical, structural, chemical and optical properties, which depend on the oxidation state of Mo, on the degree of crystallinity, on the sample morphology and on environmental conditions
Owing to its high work function – up to 6.9 eV [12] – and to the layered structure of α-MoO3, MoOx is employed as a 2D material beyond graphene and as efficient hole contact on 2D transition metal dichalcogenides for p-type field effect transistors (p-FETs).[23,24,25]
Recent developments in the field of organic solar cells have shown the critical impact of air exposure on the electronic structure of the aElectronic mail: aitana.tarazaga@jku.at bElectronic mail: alberta.bonanni@jku.at
Summary
Molybdenum oxide (MoOx) is a transition metal oxide showing extraordinary electrical, structural, chemical and optical properties, which depend on the oxidation state of Mo, on the degree of crystallinity, on the sample morphology and on environmental conditions.
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