Processing and characterization of GaAs grown into recessed silicon

Abstract

GaAs has been grown by molecular-beam epitaxy in silicon recesses to form a planar structure suitable for integration of GaAs and silicon devices. The layers were examined using scanning electron microscopy, transmission electron microscopy, and cathodoluminescence. Epitaxial regions inside the well appeared comparable to GaAs grown on unpatterned silicon wafers. Crystal quality of the epitaxial GaAs, determined by cathodoluminescence, appeared to be independent of the distance from the edge of the well; however, (111) stacking faults were present in the GaAs along the sidewalls of the well.