Abstract
This paper presents new processes for the enhancement of oxygen reactive ion etching (RIE) resistance of two single-layer resist systems by selective incorporation of potassium ions into the resist image in solution after exposure. One resist system is diazonaphthoquinone (DAQ) and poly( p-formyloxystyrene) (PFS) mixed with a catalytic amount of triphenylsulfonium hexafluoroarsenate as a photoacid generator. After deep-UV exposure, the photoacid catalyzes the photo-Fries rearrangement of PFS to form poly( p-hydroxystyrene) (PHS); DAQ rearranges to form indene carboxylic acid and grafts into PHS via S-O bond formation. A latent image is formed by selective reaction of carboxylic groups with C 5H 11COOK in aqueous solution in exposed areas which are resistant to oxygen RIE. Dry developed negative-tone patterns are obtained by oxygen RIE. The other resist system is AZ1350J, dipping in C 23H 47COOK in hexane after deep-UV exposure. C 23H 47COOK selectively incorporates into unexposed areas only. Dry developed positive-tone patterns are obtained by oxygen RIE in this case.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
