Abstract
In this contribution we present a critical review of experimental data and theoretical considerations concerning the stimulated emission in ZnO. The main processes discussed in literature leading to stimulated emission at RT are inelastic exciton‐exciton scattering (P‐band) and recombination of an inverted band‐to‐band transition in an electron‐hole plasma (EHP). While the latter process becomes dominant at RT for densities close to 1019 cm−3 theory predicts a lower threshold for inelastic exciton‐free carrier scattering compared to the P‐band. In addition to that the exciton‐nLO phonon process might also have a lower threshold than the P‐band. A detailed analysis of the temperature dependence of the band gap and of the homogenous broadening of the exciton resonance allows us to distinguish between the various processes but also casts some doubt on the frequently given claim of excitonic RT lasing in ZnO. Therefore we argue that inelastic scattering processes with carriers, phonons or plasmons in a still nondegenerate and strongly coulomb correlated carrier gas are relevant processes for stimulated emission at RT.
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