Abstract
Exposure characteristics that were obtained when growing various films on natural low Miller index surfaces of several crystals were collected and analyzed. An evolution theory that explains their special form was constructed. The type of dose characteristics obtained suggests that the surface underwent a reconstruction, i.e., a nonequilibrium phase transition that occurs on the surface. A quantitative analysis of the experiments available has been performed. In particular, a quantitative estimation was obtained of to what extent coverage with lead hinders the oxidation of the surface of a nickel crystal. Upon intense light or electron irradiation of silicon, divacancies are the predominant centers of the formation of point and extended radiation defects, as well as of local regions of melting. For some two-dimensional systems (divacancies, sulfur atoms on the surfaces of passivated semiconductors, oxide films), delay times and evolution times for the self-organized structure formed were determined.
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