Process technology for monolithic high-speed Schottky/resonant tunneling diode logic integrated circuits

Abstract

A seven-layer process was developed to fabricate monolithic high-speed logic circuits, requiring integration of Schottky diodes and resistors with interband resonant tunneling diodes (RTDs). With this process technology, we have demonstrated a functionally complete logic family based on RTDs with a maximum operating frequency in excess of 12 GHz and a minimum power dissipation on the order of 0.5 mW per gate.