Abstract
In this work we use the PROCOM sofware to model Mg doped GaN film growth by MOCVD. The 2/3D conservation equations of mass, energy, momentum and species are solved by the nonsymmetric conjugate gradient method with block preconditioning (H. C. Elman, Preconditioned conjugate gradient methods for nonsymmetric systems of linear equations (Yale University Research Report, 1981) [5]). A kinetics model with gas/surface adduct formation has been incorporated with detailed Mg dopant reaction mechanism. We reproduced broad doping profiles caused by memory effects and verified that the formation of (NH3)2-MgCp2 and NH3-MgCp2 adducts play an important role in p-doping of GaN and related Group III nitrides. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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